| PART |
Description |
Maker |
| 2SA1586 |
High voltage and high current. Excellent hFE linearity. High hFE. Small package.
|
TY Semiconductor Co., Ltd
|
| GM1015 |
Excellent HFE Linearity HFE : HFE(0.1mA)/HFE(2mA)=0.95(Typ.)
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| KTD2066 |
High hFE Transistor
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING/ LAMP SOLENOID DRIVER)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| 2SC3617 |
World standard miniature package. High hFE hFE=800 to 1600.
|
TY Semiconductor Co., Ltd
|
| KTD1003 KTD1003-15 |
EPITAXIAL PLANAR NPN TRANSISTOR
High hFE Transistor
|
KEC(Korea Electronics)
Korea Electronics (KEC)
|
| CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
| PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| HCMS-2902 HCMS-2903 HCMS-2904 HCMS-2911 HCMS-2912 |
HCMS-2962 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2961 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2964 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2963 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2925 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2924 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2923 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2922 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2921 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2915 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2914 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2913 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2912 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2911 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2905 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2904 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2903 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2902 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2901 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2975-HI000 · High Performance CMOS 5 x 7 Alphanumeric Displays
Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
T-PNP-SI-HV AF PWR AMP
High Performance CMOS 5 x 7 Alphanumeric Displays 高性能CMOS 5 × 7字母数字显示
|
http://
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Vishay Intertechnology, Inc.
|
| 2SC3807C |
2 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| SMCJ6.0C SMCJ58CA SMCJ26CA SMCJ75CA SMCJ60C SMCJ16 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
GT 7C 7#12 SKT RECP WALL
Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.55W; C-E Breakdown Voltage:32V; DC Current Gain Min (hfe):60; Collector Current:1A; DC Current Gain Max (hfe):175; Power (Ptot):550mW
|
Bytes
|
| 2SC3651 |
NPN Epitaxial Planar Silicon Transistor High hFE Low-Frequency General-Purpose Amplifier Applications
|
SANYO
|
